Mitsubishi IGBT Module CM400DY1-12E

CM400DY1-12E is a product code for a dual IGBT module (Insulated Gate Bipolar Transistor) manufactured by Mitsubishi Electric Corporation, a Japanese multinational electronics and electrical equipment company.

The module is designed for use in high-power applications such as motor drives, power supplies, and industrial automation. It contains two IGBT power switches and two anti-parallel diodes in a half-bridge configuration, all of which are insulated from the heat sink.

The CM400DY1-12E module has a maximum collector-emitter voltage of 1200V, a maximum collector current of 400A, and a maximum power dissipation of 1080W. It operates at a frequency range of up to 20kHz and has a low inductance design for high switching speed.

The module has a compact and robust design with a weight of 380g and dimensions of 100mm x 62mm x 17.2mm. It also has a built-in temperature sensor for monitoring and protection against overheating.

Overall, the CM400DY1-12E module is a high-performance and reliable solution for high-power applications that require efficient and precise power conversion. It is suitable for use in a wide range of industrial and commercial applications where high power density, fast switching, and high reliability are required.

$240m Chinese IGBT Plant Uses UK Technology

IGBTs are a crucial part in high-efficiency electrical power transformation systems used in variable-speed motor drives, uninterruptible power supplies, power grids, trains, renewable power plants and electric and hybrid electric vehicles. A $240m IGBT (Insulated Gate Bipolar Transistor) manufacture plant has been established by Zhuzhou CSR Times Electric Co, a semiconductor maker from China. The company has done this by comprising technology enhanced by Dynex Semiconductor, its supplementary in the United Kingdom. This plant is mentioned to be the first of its category in China and the second all over the world. Using eight-inch silicon wafers, high performance IGBT modules and chips are produced in this factory which is located in Zhuzhou. Output is 120,000 wafers and 1 million IGBT modules every year in the first stage of the operation. Over two years were needed by the latest production line to be built. Technical advice, support, staff training were provided by Dynex throughout this process, both in China and in Lincoln.

FF800R17KF6C_B2 – An Ideal Dual IGT For Wind Power Systems

FF800R17KF6C_B2, a 1700V IHM 130mm Dual IGBT Module with IGBT2 Low Loss, enlarged diode and AlSiC base-plate. It’s the best solution for your renewable energy and industry applications. The module is manufactured by Infineon Technologies AG, a renowned semiconductor manufacturer from Germany. Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy Efficiency, Mobility and Security. FF800R17KF6C_B2 is highly reliable and features robust module construction. It has enlarged diode for regenerative operation.

 

Power semiconductors have a major role to generate energy from renewable sources. In wind turbines, power semiconductors are utilized to transform power and to combine the generator with the grid. They are also made into different subsidiary drives such as pitch drives, yaw drives, pumps and into protection circuits like crowbars. A number of vital functions and applications are controlled by wind power converters and that’s why highest quality power semiconductors are required. This is applicable in specific to offshore wind converters which operate in immensely tough conditions exposed to salt, humidity etc. Speedy growth is planned for the offshore portion. FF800R17KF6C_B2 is a perfect choice in these fields.

 

Wind energy turbines must also be intended to deliver maximum levels of availability in order to contribute to grid stability. This applies not only to the converter, but also to the different subsidiary drives mounted in different positions. Grid stability therefore depends on power semiconductor assemblies offering dynamic capabilities, outstanding functionality and superior reliability.

 

Advantages like high power density for compact inverter designs & standardized housing can be found if we use FF800R17KF6C_B2 in wind power applications.

 

There has been flourishing global advancement in wind power generation. The sum of power produced using wind-power has raised from 7.5 Giga-Watts in 1997 to 74 Giga-Watts in 2006 with further increment happening at the rate of a doubling of generation every three to four years. It is calculated that 12 percent of the world’s electricity requirements will be supplied by wind-power in 2020. The prominent wind power generators in the world are Germany and Spain, succeeded by the United States. China is also invasively imitating wind-power generation. China blueprints to spend $ 700 Billion until 2020 in renewable energy projects. Huadian Power International Corporation, a China based company has obtained authorization to build two wind power projects with an associated capability of 147 Mega-Watts. Moreover, an Indian company, Suzlon Energy, has become the world’s eighth largest generator of wind turbine generators. Companies have also fixed on wind-power as a significant growth segment in the future.

 

http://www.uscomponent.com had been selling IGBT power transistor modules since 2001.Infineon, Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

 

http://www.uscomponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

FF800R17KF6C_B2 – An Ideal Dual IGT For Wind Power Systems

FF800R17KF6C_B2, a 1700V IHM 130mm Dual IGBT Module with IGBT2 Low Loss, enlarged diode and AlSiC base-plate. It’s the best solution for your renewable energy and industry applications. The module is manufactured by Infineon Technologies AG, a renowned semiconductor manufacturer from Germany. Infineon provides semiconductor and system solutions, focusing on three central needs of our modern society: Energy Efficiency, Mobility and Security. FF800R17KF6C_B2 is highly reliable and features robust module construction. It has enlarged diode for regenerative operation.

 

Power semiconductors have a major role to generate energy from renewable sources. In wind turbines, power semiconductors are utilized to transform power and to combine the generator with the grid. They are also made into different subsidiary drives such as pitch drives, yaw drives, pumps and into protection circuits like crowbars. A number of vital functions and applications are controlled by wind power converters and that’s why highest quality power semiconductors are required. This is applicable in specific to offshore wind converters which operate in immensely tough conditions exposed to salt, humidity etc. Speedy growth is planned for the offshore portion. FF800R17KF6C_B2 is a perfect choice in these fields.

 

Wind energy turbines must also be intended to deliver maximum levels of availability in order to contribute to grid stability. This applies not only to the converter, but also to the different subsidiary drives mounted in different positions. Grid stability therefore depends on power semiconductor assemblies offering dynamic capabilities, outstanding functionality and superior reliability.

 

Advantages like high power density for compact inverter designs & standardized housing can be found if we use FF800R17KF6C_B2 in wind power applications.

 

There has been flourishing global advancement in wind power generation. The sum of power produced using wind-power has raised from 7.5 Giga-Watts in 1997 to 74 Giga-Watts in 2006 with further increment happening at the rate of a doubling of generation every three to four years. It is calculated that 12 percent of the world’s electricity requirements will be supplied by wind-power in 2020. The prominent wind power generators in the world are Germany and Spain, succeeded by the United States. China is also invasively imitating wind-power generation. China blueprints to spend $ 700 Billion until 2020 in renewable energy projects. Huadian Power International Corporation, a China based company has obtained authorization to build two wind power projects with an associated capability of 147 Mega-Watts. Moreover, an Indian company, Suzlon Energy, has become the world’s eighth largest generator of wind turbine generators. Companies have also fixed on wind-power as a significant growth segment in the future.

 

http://www.uscomponent.com had been selling IGBT power transistor modules since 2001.Infineon, Thyssen Krupp, OTIS, IXYS, SONY DADC, General Motors, Hongkong Electric Holdings Limited, Singapore Mass Rapid Transit Trains LTD, Verkehrsbetriebe Zurich, Czech Airlines, Molex, Cisco, Omron, Good Year Tires, Thai Airasia, Boeing, Xilinx, LEAR SIEGLER, and General Electric.

 

http://www.uscomponent.com has a Quality Control Team like no other. This means that we know how to work hard in order to ensure to make sure that the quality of all of the parts we’re selling is high. Because we only sell new and original electronic parts, we provide our customers with a 30-day warranty. And because we have connections with IGBT power transistor modules manufacturers, OEMs and distributors, we’re able to pass any savings on to our customers, giving them a lower price while still providing them with the quality products they deserve. Our inventory is carefully managed and held to the highest standards, and stored in a controlled environment warehousing facility.

LASTEST DUAL HIGH VOLTAGE IGBT MODULES TARGETS THE HEAVY INDUSTRIES

Mitsubishi  developed the X series of dual IGBT modules, samples of a  3.3. kv ( LV100 with 6KV isolation taking up to a  450A) will be available for shipping from March next year (2017), then 1.7 kb, 3.3 kv, 4.5 and 6.5kv versions in that order, they will be all available from 2019 onwards (with a  10kv isolation)

 

This device will satisfy demand for efficient and high power density semiconductors, they will be contributing to higher power outputs and efficiency by adopting the lastest diodes for IGBTs and RFCs, standardized 100x140x40 package dimensions will allow the manufacturing industry to simplify the design and secure multiple sources for inverters.